IRFR430A

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES Low gate charge Qg results in simple drive requirement Improved gate, avalanche, and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche voltage and current Available Effective Coss specified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Switch mode power supply (SMPS) Uninterruptible power supply High speed power switching ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR430A-GE3 Lead (Pb)-free IRFR430APbF Note a. See device orientation DPAK (TO-252) SiHFR430ATR-GE3 a IRFR430ATRPbFa DPAK (TO-252) SiHFR430ATRL-GE3 a IRFR430ATRLPbFa DPAK (TO-252) SiHFR430ATRR-GE3 a - IPAK (TO-251) SiHFU430A-GE3 IRFU430APbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junc...