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IRFR224 Dataheets PDF



Part Number IRFR224
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFR224 DatasheetIRFR224 Datasheet (PDF)

www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D DPAK (TO-252) D IPAK (TO-251) D G 1.1 GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categoriz.

  IRFR224   IRFR224


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www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D DPAK (TO-252) D IPAK (TO-251) D G 1.1 GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) SiHFR224-GE3 IRFR224PbF SiHFR224-E3 DPAK (TO-252) SiHFR224TR-GE3 IRFR224TRPbFa SiHFR224T-E3a DPAK (TO-252) SiHFR224TRL-GE3 IRFR224TRLPbFa SiHFR224TL-E3a IPAK (TO-251) SiHFU224-GE3 IRFU224PbF SiHFU224-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 3.8 A (see fig. 12). c. ISD  3.8 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 250 ± 20 3.8 2.4 15 0.33 0.020 130 3.8 4.2 42 2.5 4.8 - 55 to + 150 260 UNIT V A W/°C mJ A mJ W V/ns °C S13-0165-Rev. C, 04-Feb-13 1 Document Number: 91271 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient (PCB Mount)a RthJA Maximum Junction-to-Ambient RthJA Maximum Junction-to-Case RthJC Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). TYP. - MAX. 50 110 3.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 2.3 Ab VDS = 50 V, ID = 2.3 Ab 250 - -V - 0.36 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 1.1  1.5 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 4.4 A, VDS = 200 V, see fig. 6 and 13b, c VDD = 125 V, ID = 4.4 A, RG = 18 , RD = 28 , see fig. 10b, c - 260 77 - pF 15 - 14 - 2.7 nC - 7.8 7.0 13 - ns 20 12 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 nH - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 3.8 A - - 15 Body Diode Voltage VSD TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr - 200 400 ns TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/μsb Qrr - 0.93 1.9 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2.


SiHFU224 IRFR224 IRFU224


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