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IRFR224

Vishay Siliconix

Power MOSFET

www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...


Vishay Siliconix

IRFR224

File Download Download IRFR224 Datasheet


Description
www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D DPAK (TO-252) D IPAK (TO-251) D G 1.1 GS GD S S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR224, SiHFR224) Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) SiHFR224-GE3 IRFR224PbF SiHFR224-E3 DPAK (TO-252) SiHFR224TR-GE3 IRFR224TRPbFa SiHFR224T-E3a DPAK (TO-252) SiHFR224TRL-GE3 IRFR224TRLPbFa SiHFR224TL-E3a IPAK (TO-251) SiHFU224-GE3 IRFU224PbF SiHFU224-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Cont...




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