IRFU214

www.vishay.com IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 D FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) SiHFR214-GE3 IRFR214PbF SiHFR214-E3 DPAK (TO-252) SiHFR214TRL-GE3 IRFR214TRLPbFa SiHFR214TL-E3a DPAK (TO-252) SiHFR214TR-GE3 IRFR214TRPbFa SiHFR214T-E3a DPAK (TO-252) SiHFR214TRR-GE3 - IPAK (TO-251) SiHFU214-GE3 IRFU214PbF SiHFU214-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Sou...