IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) R...
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
14 2.7 8.1 Single
7.0 D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
S G
GD S
S N-Channel MOSFET
FEATURES Low Gate Charge Qg Results in Simple Drive
Requirement Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness Fully Characterized Capacitance and
Avalanche Voltage and Current Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply Power Factor Correction
TYPICAL SMPS TOPOLOGIES Low Power Single
Transistor Flyback
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR1N60A-GE3
Lead (Pb)-free
IRFR1N60APbF SiHFR1N60A-E3
DPAK (TO-252)
SiHFR1N60ATRL-GE3a
IRFR1N60ATRLPbFa SiHFR1N60ATL-E3a
DPAK (TO-252)
SiHFR1N60ATR-GE3a
IRFR1N60ATRPbFa SiHFR1N60AT-E3a
DPAK (TO-252)
SiHFR1N60ATRR-GE3a
IRFR1N60ATRRPbFa SiHFR1N60ATR-E3a
IPAK (TO-251) SiHFU1N60A-GE3 IRFU1N60APbF SiHFU1N60A-E3
Note a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalan...