IRFR120

www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 VGS = 10 V Qg (Max.) (nC) 16 Qgs (nC) Qgd (nC) 4.4 7.7 Configuration Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR120, SiHFR120) Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR120-GE3 IRFR120PbF SiHFR120-E3 Note a. See device orientation. DPAK (TO-252) SiHFR120TR-GE3a IRFR120TRPbFa SiHFR120T-E3a DPAK (TO-252) SiHFR120TRR-GE3a IRFR120TRRPbFa SiHFR120TR-E3a DPAK (TO-252) SiHFR120TRL-GE3a IRFR120TRLPbFa SiHFR120TL-E3a IPAK (TO-251) SiHFU120-GE3 IRFU120PbF SiHFU120-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwis...