IXFH120N15P

Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 120 75 300 60 50 1.5 10 600 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247AD (IXFH) G D D (TAB) S ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight TO-268 (IXFT) G S D = Drain TAB = Drain D (TAB) G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 (TO-247) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 17 V V nA µA µA mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty c...