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HSMP-3810 Dataheets PDF



Part Number HSMP-3810
Manufacturers Agilent
Logo Agilent
Description Surface Mount PIN Diodes
Datasheet HSMP-3810 DatasheetHSMP-3810 Datasheet (PDF)

Agilent HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation www.DataSheet4U.com Description/Applications The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and SOT-323 packages. They are specifically designed for use at frequencies which are much higher than t.

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Agilent HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Features • Diodes Optimized for: – Low Distortion Attenuating – Microwave Frequency Operation www.DataSheet4U.com Description/Applications The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and SOT-323 packages. They are specifically designed for use at frequencies which are much higher than the upper limit for conventional diodes. A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime. Package Lead Code Identification, SOT-23 (Top View) SINGLE 3 SERIES 3 • Surface Mount Packages – Single and Dual Versions – Tape and Reel Options Available • Low Failure in Time (FIT) Rate[1] • Lead-free Option Available Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet. 1 #0 2 1 #2 2 COMMON ANODE 3 COMMON CATHODE 3 1 #3 2 1 #4 2 Package Lead Code Identification, SOT-323 (Top View) SINGLE SERIES DUAL CATHODE 3 1 2 4810 B COMMON ANODE C COMMON CATHODE E DUAL CATHODE F 481B 2 Absolute Maximum Ratings[1] TC = +25°C Symbol Parameter If PIV Tj Tstg θjc Forward Current (1 µs Pulse) Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance[2] Unit Amp V °C °C °C/W SOT-23 1 Same as VBR 150 -65 to 150 500 SOT-323 1 Same as VBR 150 -65 to 150 150 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to www.DataSheet4U.com the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Electrical Specifications TC = +25°C (Each Diode) Conventional Diodes Part Number HSMP3810 3812 3813 3814 381B 381C 381E 381F Package Marking Code E0[1] E2[1] E3[1] E4[1] E0[2] E2[2] E3[2] E4[2] Minimum Maximum Maximum Minimum Breakdown Total Total High Voltage Resistance Capacitance Resistance VBR (V) RT (Ω) CT (pF) RH (Ω) 100 3.0 0.35 1500 Maximum Low Resistance RL (Ω) 10 Lead Code Configuration 0 2 3 4 B C E F Single Series Common Anode Common Cathode Single Series Common Anode Common Cathode Test Conditions VR = VBR Measure IR ≤ 10 µA IF = 100 mA f = 100 MHz VR = 50 V f = 1 MHz IR = 0.01 mA f = 100 MHz IF = 20 mA f= 100 MHz High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes Part Number HSMP4810 481B Package Marking Code EB EB Minimum Maximum Typical Maximum Typical Breakdown Series Total Total Total Voltage Resistance Capacitance Capacitance Inductance VBR (V) RS (Ω) CT (pF) CT (pF) LT (nH) 100 VR = VBR Measure IR ≤ 10 µA 3.0 IF = 100 mA 0.35 VR = 50 V f = 1 MHz 0.4 VR = 50 V f = 1 MHz VR = 0 V 1.0 f = 500 MHz – 3 GHz Lead Code B[1] B[2] Configuration Dual Cathode Dual Cathode Test Conditions Notes: 1. Package marking code is white. 2. Package laser marked. 3 Typical Parameters at TC = 25°C Part Number HSMP381x Test Conditions Series Resistance RS (Ω) 75 IF = 1 mA f = 100 MHz Carrier Lifetime τ (ns) 1500 IF = 50 mA IR = 250 mA Reverse Recovery Time Trr (ns) 300 VR = 10 V IF = 20 mA 90% Recovery Total Capacitance CT (pF) 0.27 @ 50 V f = 1 MHz www.DataSheet4U.com Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode 0.45 TOTAL CAPACITANCE (pF) 10000 TA = +85°C TA = +25°C TA = –55°C INPUT INTERCEPT POINT (dBm) 120 RF RESISTANCE (OHMS) 0.40 0.35 1 MHz 0.30 0.25 0.20 frequency>100 MHz 0.15 0 2 4 6 8 10 12 14 16 18 20 30 MHz 1000 Diode Mounted as a 110 Series Attenuator in a 50 Ohm Microstrip 100 and Tested at 123 MHz 90 80 70 60 50 40 1000 100 10 100 10 1 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) IF – FORWARD BIAS CURRENT (mA) DIODE RF RESISTANCE (OHMS) Figure 1. RF Capacitance vs. Reverse Bias. Figure 2. RF Resistance vs. Forward Bias Current. Figure 3. 2nd Harmonic Input Intercept Point vs. Diode RF Resistance. 100 IF – FORWARD CURRENT (mA) Typical Applications for Multiple Diode Products VARIABLE BIAS 10 1 0.1 125°C 25°C –50°C 0 0.2 0.4 0.6 0.8 1.0 1.2 INPUT RF IN/OUT 0.01 VF – FORWARD VOLTAGE (mA) Figure 4. Forward Current vs. Forward Voltage. FIXED BIAS VOLTAGE Figure 5. Four Diode π Attenuator. See Application Note 1048 for Details. 4 Typical Applications for HSMP-481x Low Inductance Series Microstrip Series Connection for HSMP-481x Series In order to take full advantage of the low inductance of the HSMP-481x series when using www.DataSheet4U.com them in series applications, both lead 1 and lead 2 should be connected together, as shown in Figure 7. 1 HSMP-481x 3 2 Figure 6. Internal Connections. Figure 7. Circuit Layout. Microstrip Shunt Connections for HSMP-481x Series In Figure 8, the center conductor of the microstrip line is interrupted and leads 1 and 2 of the HSMP-481x series diode are placed across the resulting gap. This forces the 1.5 nH lead inductance of leads 1 and 2 to appear as part of a low pass filter, re.


TMBH1200A HSMP-3810 HSMP-481x


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