SM8J45

SM8G45, SM8J45, SM8G45A, SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.M.S On−State Current: IT (RMS) = 8A High Commutating (dv / dt) Unit: mm MAXIMUM RATINGS www.DataSheet4U.com CHARACTERISTIC SM8G45 SM8G45A SM8J45 SM8J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off− State Voltage V R.M.S On−State Current (Full Sine Waveform Tc = 105°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 −40~125 −40~125 A A A s A / µs W W V A °C °C 2 JEDEC JEITA TOSHIBA TO-220AB ― 13-10G1A Weight: 2.0 g (typ.) 1 2004-07-06 SM8G45, SM8J45, SM8G45A, SM8J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM8G45 SM8J45 Gate Trigger Voltage SM8G45A SM8J45A II III IV I II III IV I SM8G45 SM8J45 Gate Trigger Current SM8G45A SM8J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off− State Voltage at Commutation SM8G45 SM8J45 SM8G45A SM8J45A VTM VGD IH Rth (j−c) ITM = 12A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction t...