SiHFP17N50L

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0.28 TO-247AC D G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications Low Gate Charge Results in Simple Drive Requirement Available RoHS* COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Compliant to RoHS Directive 2002/95/EC APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supply Motor Control applications TO-247AC IRFP17N50LPbF SiHFP17N50L-E3 IRFP17N50L SiHFP17N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C ID Pulsed Drain Currenta IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T...