Power MOSFET
www.vishay.com
IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
S
SOT-223
G
D
S D G
Marking code: FE
D P-Channe...
Description
www.vishay.com
IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
S
SOT-223
G
D
S D G
Marking code: FE
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
-60 VGS = -10 V
12 3.8 5.1 Single
0.50
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location
FEATURES
Surface-mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
P-channel
Fast switching
Available
Ease of paralleling
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
SOT-223 SiHFL9014TR-GE3 IRFL9014TRPbF-BE3 a, b IRFL9014TRPbF a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pu...
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