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IRFL214, SiHFL214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
2.0
SOT-223 D
S D G
Marking code: FD
D
G S
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
SOT-223 SiHFL214-GE3 IRFL214PbF SiHFL214-E3
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
SOT-223 SiHFL214TR-GE3 a IRFL214TRPbF a SiHFL214T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a
EAS IAR EAR
Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c
TC = 25 °C TA = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 128 mH, Rg = 25 , IAS = 0.79 A (see fig. 12). c. ISD 2.7 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT 250 ± 20 0.79 0.50 6.3 0.025 0.017 50 0.79 0.31 3.1 2.0 4.8
-55 to +150 300
UNIT V
A
W/°C mJ A mJ W V/ns °C
S14-1685-Rev. E, 18-Aug-14
1
Document Number: 91194
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFL214, SiHFL214
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB Mount) a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 60 40
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.47 A b
VDS = 50 V, ID = 0.47 A
250 -
-V
- 0.39 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 2.0
0.50 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.7 A, VDS = 200 V, see fig. 6 and 13 b
VDD = 125 V, ID = 2.7 A, Rg = 24 , RD = 45 , see fig. 10 b
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
-
-
140 42 - pF 9.6 - 8.2 - 1.8 nC - 4.5 7.0 7.6 -
ns 16 7.0 4.0 -
nH 6.0 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Current a
integral reverse ISM p - n junction diode
D
G S
- - 0.79
A - - 6.3
Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
VSD
TJ = 25 °C, IS = 0.79 A, VGS = 0 V b
- - 2.0 V
trr Qrr
- 190 390 ns
TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μs b
-
0.64 1.3
μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
S14-1685-Rev. E, 18-Aug-14
2
Document N.