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SiHFL214 Dataheets PDF



Part Number SiHFL214
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFL214 DatasheetSiHFL214 Datasheet (PDF)

www.vishay.com IRFL214, SiHFL214 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 SOT-223 D S D G Marking code: FD D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. SOT-223 SiHFL214-GE3 IRFL214PbF SiHFL214-E3 FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive ava.

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www.vishay.com IRFL214, SiHFL214 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 SOT-223 D S D G Marking code: FD D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. SOT-223 SiHFL214-GE3 IRFL214PbF SiHFL214-E3 FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. SOT-223 SiHFL214TR-GE3 a IRFL214TRPbF a SiHFL214T-E3 a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a EAS IAR EAR Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c TC = 25 °C TA = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 128 mH, Rg = 25 , IAS = 0.79 A (see fig. 12). c. ISD  2.7 A, dI/dt  65 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 250 ± 20 0.79 0.50 6.3 0.025 0.017 50 0.79 0.31 3.1 2.0 4.8 -55 to +150 300 UNIT V A W/°C mJ A mJ W V/ns °C S14-1685-Rev. E, 18-Aug-14 1 Document Number: 91194 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFL214, SiHFL214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient  (PCB Mount) a RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 60 40 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 0.47 A b VDS = 50 V, ID = 0.47 A 250 - -V - 0.39 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 2.0  0.50 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal Source Inductance LS Drain-Source Body Diode Characteristics VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 2.7 A, VDS = 200 V, see fig. 6 and 13 b VDD = 125 V, ID = 2.7 A, Rg = 24 , RD = 45 , see fig. 10 b Between lead, 6 mm (0.25") from package and center of die contact D G S - - 140 42 - pF 9.6 - 8.2 - 1.8 nC - 4.5 7.0 7.6 - ns 16 7.0 4.0 - nH 6.0 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the  Pulsed Diode Forward Current a integral reverse ISM p - n junction diode D G S - - 0.79 A - - 6.3 Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time VSD TJ = 25 °C, IS = 0.79 A, VGS = 0 V b - - 2.0 V trr Qrr - 190 390 ns TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μs b - 0.64 1.3 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S14-1685-Rev. E, 18-Aug-14 2 Document N.


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