SiHFD9110

IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single S FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available 1.2 RoHS* COMPLIANT www.DataSheet4U.com HEXDIP G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFD9110PbF SiHFD9110-E3 IRFD9110 SiHFD9110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT - 100 ± 20 - 0.70 - 0.49 - 5.6 0.0083 140 - 0.7 0.13 1.3 - 5.5 - 55 to + 175 300d W/°C mJ A mJ W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximu...