Power MOSFET
IRFD110, SiHFD110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Description
IRFD110, SiHFD110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.3 2.3 3.8 Single
D
FEATURES
100 0.54
Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 °C Operating Temperature Fast Switching and Ease of Paralleling Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
www.DataSheet4U.com
HEXDIP
DESCRIPTION
G
S D
G S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb HEXDIP IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 100 ± 20 1.0 0.71 8.0 0.0083 140 1.0 0.13 1.3 5.5 - 55 to + 175 300d W/°C mJ A mJ W V/ns °C A UNIT V
Linear Derating Factor Single Pulse Avalanche
Repetitive Avalanche Currenta Repetitive Avalanche Energya
Maximum Power D...
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