Document
IRFBC40, SiHFBC40
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single
D
FEATURES
600 1.2
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
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TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
G
S G D S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFBC40PbF SiHFBC40-E3 IRFBC40 SiHFBC40
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 20 6.2 3.9 25 1.0 570 6.2 13 125 3.0 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12). c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91115 S-81303-Rev. A, 16-Jun-08 www.vishay.com 1
IRFBC40, SiHFBC40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.0 °C/W UNIT
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER Static www.DataSheet4U.com Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 3.7Ab VDS = 100 V, ID = 3.7 Ab VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 ID = 6.2 A, VDS = 360 V, see fig. 6 and 13b
600 2.0 4.7
0.7 -
4.0 ± 100 100 500 1.2 -
V V/°C V nA µA Ω S
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 10 V
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1300 160 30 13 18 55 20 4.5 7.5
60 8.3 30 nH ns nC pF
VDD = 300 V, ID = 6.2 A, RG = 9.1 Ω, RD = 47 Ω, see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
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450 3.8
6.2 A 25 1.5 940 7.9 V ns µC
G
S
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
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Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91115 S-81303-Rev. A, 16-Jun-08
IRFBC40, SiHFBC40
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91115 S-81303-Rev. A, 16-Jun-08
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IRFBC40, SiHFBC40
Vishay Siliconix
www.DataSheet4U.com
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91115 S-81303-Rev. A, 16-Jun-08
IRFBC40, SiHFBC40
Vishay Siliconix
RD VDS VGS RG D.U.T. + - VDD 10 V
Pulse.