Power MOSFET
Power MOSFET
IRFBC20, SiHFBC20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Description
Power MOSFET
IRFBC20, SiHFBC20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
4.4
18
3.0
8.9
Single
D TO-220AB
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRFBC20PbF SiHFBC20-E3 IRFBC20 SiHFBC20
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VDS VGS
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
f...
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