SiHFB17N60K

IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 99 32 47 Single D FEATURES 600 0.35 Smaller TO-220 Package Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT www.DataSheet4U.com Fully Characterized Capacitance and Avalanche Voltage and Current Lead (Pb)-free Available TO-220 APPLICATIONS Switch Mode Power Supply (SMPS) G S G D S N-Channel MOSFET Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB17N60KPbF SiHFB17N60K-E3 IRFB17N60K SiHFB17N60K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 30 17 11 68 2.7 330 17 34 340 11 - 55 to + 150 300d 10 W/°C mJ A mJ W V/ns °C N A UNIT V Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temp...