Power MOSFET
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd ...
Description
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
89 27 43 Single
0.285
D
TO-220
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
Low Gate Charge Qg Results in Simple Drive
Requirement
Available
Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
COMPLIANT
Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
Low RDS(on)
Lead (Pb)-free Available
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
TO-220 IRFB16N50KPbF SiHFB16N50K-E3 IRFB16N50K SiHFB16N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 2.2 mH, RG = 25 Ω, IAS = 17 A. c. ISD ≤ 17 A, dI/dt ≤ 500 A/µs, VDD...
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