SiHFB13N50A

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 81 20 36 Single D TO-220AB 0.450 G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES Lower Gate Charge Qg Results in Simpler Drive Reqirements Available Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness Fully Characterized Capacitance and Avalanche Voltage Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supplies High Speed Power Switching TO-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A SiHFB13N50A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor TC = 25 °C VGS at 10 V ID TC = 100 °C IDM Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a). c. ISD  14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °...