Power MOSFET
www.vishay.com
IRF9Z34, SiHF9Z34
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs ...
Description
www.vishay.com
IRF9Z34, SiHF9Z34
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-60 VGS = -10 V
34 9.9 16 Single
0.14
S
TO-220AB G
FEATURES
Dynamic dV/dt rating
Repetitive avalanche rated P-channel
Available
175 °C operating temperature
Available
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
S D G
D P-Channel MOSFET
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
TO-220AB IRF9Z34PbF SiHF9Z34-E3 IRF9Z34 SiHF9Z34
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
...
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