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SiHF840AL Dataheets PDF



Part Number SiHF840AL
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHF840AL DatasheetSiHF840AL Datasheet (PDF)

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 9.0 18 Single I2PAK (TO-262) D2PAK (TO-263) 0.85 D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage a.

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IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 9.0 18 Single I2PAK (TO-262) D2PAK (TO-263) 0.85 D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge • Full Bridge ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF840AS-GE3 Lead (Pb)-free IRF840ASPbF SiHF840AS-E3 Note a. See device orientation. D2PAK (TO-263) SiHF840ASTRL-GE3a IRF840ASTRLPbFa SiHF840ASTL-E3a D2PAK (TO-263) SiHF840ASTRR-GE3a IRF840ASTRRPbFa SiHF840ASTR-E3a I2PAK (TO-262) SiHF840AL-GE3a IRF840ALPbF SiHF840AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Temperature for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD  8.0 A, dI/dt  100 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Uses IRF840A, SiH840A data and test conditions. LIMIT 500 ± 30 8.0 5.1 32 1.0 510 8.0 13 125 3.1 5.0 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91066 S11-1050-Rev. D, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient (PCB Mount)a RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 40 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th).


SiHF840A SiHF840AL SiHF840AS


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