Document
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
38 9.0 18 Single
I2PAK (TO-262)
D2PAK (TO-263)
0.85 D
G
SD
D G
S
G
S N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching
TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge • Full Bridge
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF840AS-GE3
Lead (Pb)-free
IRF840ASPbF SiHF840AS-E3
Note a. See device orientation.
D2PAK (TO-263) SiHF840ASTRL-GE3a IRF840ASTRLPbFa SiHF840ASTL-E3a
D2PAK (TO-263) SiHF840ASTRR-GE3a IRF840ASTRRPbFa SiHF840ASTR-E3a
I2PAK (TO-262) SiHF840AL-GE3a IRF840ALPbF SiHF840AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Temperature
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Uses IRF840A, SiH840A data and test conditions.
LIMIT 500 ± 30 8.0 5.1 32 1.0 510 8.0 13 125 3.1 5.0
- 55 to + 150 300d
UNIT V
A
W/°C mJ A mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91066 S11-1050-Rev. D, 30-May-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 40 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th).