www.vishay.com
IRF840, SiHF840
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
63 9.3 32 Single
0.85
D
TO-220AB
G
S D G
S N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated
Available
• Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
TO-220AB IRF840PbF SiHF840-E3 IRF840 SiHF840
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 500 ± 20 8.0 5.1 32 1.0 510 8.0 13 125 3.5
-55 to +150 300 10 1.1
UNIT V V
A
W/°C mJ A mJ W V/ns
°C
lbf · in N·m
S16-0754-Rev. D, 02-May-16
1
Document Number: 91070
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 A b
VDS = 50 V, ID = 4.8 A b
500 -
-V
- 0.78 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 0.85
4.9 -
-S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
- 1300 - 310 - 120 -
pF
VGS = 10 V
ID = 8 A, VDS = 400 V, see fig. 6 and 13 b
-
- 63 - 9.3 nC - 32
- 14 -
VDD = 250 V, ID = 8 A Rg = 9.1 , RD = 31, see fig. 10 b
- 23 ns
- 49 -
- 20 -
Internal Drain Inductance Internal Source Inductance
LD Between lead, 6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 nH
- 7.5 -
Gate Input Resistance Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
0.6 - 2.8
Continuous Source-Drain Diode Current Pulsed Diode Forward Current a
IS
MOSFET symbol showing the
integral reverse ISM p - n junction diode
D
G S
- - 8.0 A
- - 32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8 A, VGS = 0 V b
- - 2.0 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
trr Qrr
- 460 970 ns TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b - 4.2 8.9 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91070
For technical questions, contact: hvm@vis.