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SiHF840 Dataheets PDF



Part Number SiHF840
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHF840 DatasheetSiHF840 Datasheet (PDF)

www.vishay.com IRF840, SiHF840 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 63 9.3 32 Single 0.85 D TO-220AB G S D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet.

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www.vishay.com IRF840, SiHF840 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 63 9.3 32 Single 0.85 D TO-220AB G S D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF840PbF SiHF840-E3 IRF840 SiHF840 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD  8.0 A, dI/dt  100 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 20 8.0 5.1 32 1.0 510 8.0 13 125 3.5 -55 to +150 300 10 1.1 UNIT V V A W/°C mJ A mJ W V/ns °C lbf · in N·m S16-0754-Rev. D, 02-May-16 1 Document Number: 91070 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRF840, SiHF840 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 4.8 A b VDS = 50 V, ID = 4.8 A b 500 - -V - 0.78 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.85  4.9 - -S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1300 - 310 - 120 - pF VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13 b - - 63 - 9.3 nC - 32 - 14 - VDD = 250 V, ID = 8 A Rg = 9.1 , RD = 31, see fig. 10 b - 23 ns - 49 - - 20 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 nH - 7.5 - Gate Input Resistance Drain-Source Body Diode Characteristics Rg f = 1 MHz, open drain 0.6 - 2.8  Continuous Source-Drain Diode Current Pulsed Diode Forward Current a IS MOSFET symbol showing the  integral reverse ISM p - n junction diode D G S - - 8.0 A - - 32 Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V b - - 2.0 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time trr Qrr - 460 970 ns TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b - 4.2 8.9 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S16-0754-Rev. D, 02-May-16 2 Document Number: 91070 For technical questions, contact: hvm@vis.


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