SiHF820AS

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 17 4.3 8.5 Single I2PAK (TO-262) D2PAK (TO-263) 3.0 D G SD D G S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free G S N-Channel MOSFET D2PAK (TO-263) SiHF820AS-GE3 IRF820ASPbF SiHF820AS-E3 FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge and Full Bridge I2PAK (TO-262) SiHF820AL-GE3 IRF820ALPbF SiHF820AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mount...