APM9932C

APM9932/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V Pin Description APM9932 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9932C 1 2 3 4 8 7 6 5 D D D D www.DataSheet4U.com P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) SO-8 D1 D1 SO-8 D Reliable and Rugged SO-8 Package G1 G1 G2 Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 S1 S1 S2 N-Channel MOSFET S2 N- and P-Channel MOSFET D2 D2 P-Channel MOSFET Ordering and Marking Information APM9932/C Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM9932/C K : APM9932/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw APM9932/C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM www.DataSheet4U.com PD (TA = 25°C unless otherwise noted) N-Channel 20 ±16 15 30 P-Channel -20 ±12 -6 -10 2.5 W 1.0 150 -55 to 150 50 1.0 °C °C °C/W A V Unit Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Con...