Document
APM4427K
P-Channel Enhancement Mode MOSFET
Features
•
-30V/-4A, RDS(ON) = 85mΩ(typ.) @ VGS = -10V RDS(ON) = 140mΩ(typ.) @ VGS = -4.5V
Pin Description
D D
D D
• Super High Density Cell Design www.DataSheet4U.com • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant)
S S S G
Top View of SOP − 8
( 1, 2, 3 ) S S S
Applications
•
(4) G
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
DDDD (5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information
APM4427 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SO P-8 O perating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM4427 K :
APM4427 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw
APM4427K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS*
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(TA = 25°C unless otherwise noted)
Rating -30 ±20 VGS=-10V -4 -16 -2 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 W °C/W A °C V A Unit
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
TJ TSTG PD* RθJA*
Note:
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
Test Condition APM4427K Min. -30 -1 -30 -1 -1.5 85 140 -0.7 13.5 550 120 80 10 VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω 10 25 5
2
Typ.
Max.
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD
a a
VGS=0V, IDS=-250µA VDS=-24V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=-10V, IDS=-4A VGS=-4.5V, IDS=-2.3A ISD=-1.25A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz
V µA V nA mΩ V Ω pF 20 25 55 15
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Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
-2 ±100 115 180 -1.3
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
ns
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
APM4427K
Electrical Characteristics (Cont.)
(TA = 25°C unless otherwise noted)
Symbol
Parameter
b
Test Condition
APM4427K Min. Typ. 12.3 Max. 16
Unit
Gate Charge Characteristics Qg Total Gate Charge Qgs
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Gate-Source Charge Gate-Drain Charge
VDS=-15V, VGS=-10V, IDS=-4A
3.5 1.1
nC
Qgd
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
3
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APM4427K
Typical Characteristics
Power Dissipation
2.5 5
Drain Current
2.0
4
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1.5
-ID - Drain Current (A)
Ptot - Power (W)
3
1.0
2
0.5
1 TA=25 C,VG=-10V 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160
o
0.0
TA=25 C 0 20
o
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
50 2 1
Thermal Transient Impedance
10
-ID - Drain Current (A)
s Rd
(
)L on
im
it
Duty = 0.5 0.2 0.1
1ms
0.1
0.05 0.02 0.01
1
10ms 100ms 1s
0.1
DC
0.01
Single Pulse
TA=25 C 0.01 0.1
o
1
10
100
1E-3 1E-4
Mounted on 1in pad o RθJA : 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM4427K
Typical Characteristics (Cont.)
Output Characteristics
16 VGS= -6,-7,-8,-9,-10V 14 12 -5V 210 240
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ)
180 150 120
VGS= -4.5V
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-ID - Drain Current (A)
10 8 -4V 6 4 2 0 -3V
VGS= -10V 90 60 30 0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
16 14 1.6 1.4
Gate Threshold Voltage
IDS = -250µA
Normalized Threshold Voltage
12
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
-ID - Drain Current (A)
10 8 6 4 2 0 Tj=125 C
o
Tj=25 C
o
Tj=-55 C
o.