Document
APM4350KP
N-Channel Enhancement Mode MOSFET
Features
•
30V/60A, RDS(ON) =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V
Pin Description
D D D D S S S G
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Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)
DD D D
Applications
•
Power Management in Notebook Computer, or Decktop Computer.
G
S S S
N-Channel MOSFET
Ordering and Marking Information
APM4350 Lead Free Code Handling Code Temp. Range Package Code Package Code KP : KPAK Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM4350 KP :
APM4350 XXXXX
Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw
APM4350KP
Absolute Maximum Ratings
Symbol VDSS VGSS TJ
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(TA = 25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating 30 ±20 150 -55 to 150 50 140 80 60 35 50 20 2.5 TA=25°C TA=100°C TA=25°C TA=100°C
Unit
Common Ratings (TA=25°C Unless Otherwise Noted) V °C
TSTG IS IDP
°C
A A
Mounted on Large Heat Sink ID PD RθJC Continuous Drain Current A
Maximum Power Dissipation Thermal Resistance-Junction to Case
2
W °C/W
Mounted on PCB of 1in pad area ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°°C TA=25°C TA=100°C 13.5 8.5 2.5 1 50 10 6 1.5 0.5 75 W °C/W W °C/W A
Mounted on PCB of Minimum Footprint ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A
Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006
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APM4350KP
Electrical Characteristics
Symbol Parameter
(TA = 25°C Unless Otherwise Noted)
Test Condition
APM4350KP Min. Typ. Max.
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS
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VGS=0V, IDS=250µA VDS=24V, VGS=0V Tj=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=30A VGS=4.5V, IDS=15A ISD=15A, VGS=0V IDS=15A, dlSD/dt=100A/µs
30 1 30 1.3 1.8 7.5 11.5 2.5 ±100 9 14.5
V µA V nA mΩ
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current
a
VGS(th) IGSS RDS(ON)
Drain-Source On-state Resistance
Diode Characteristics VSD trr Qrr
a
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
b
0.75 11 3
1.1
V ns nC
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
b
28 VDS=15V, VGS=10V, IDS=30A 4 9
39 nC
Gate-Source Charge
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf
Note¡G
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
1.6 1660 260 170 18 15 47 22 33 28 86 41
Ω pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006
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APM4350KP
Typical Characteristics
Power Dissipation
60
Drain Current
70 60
50
Ptot - Power (W)
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40
ID - Drain Current (A)
50 40 30 20 10
30
20
10 TC=25 C 0 20 40 60 80 100 120 140 160
o
0
0
TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area Normalized Transient Thermal Resistance
400
2 1
Thermal Transient Impedance
100
ID - Drain Current (A)
it im )L n o s( Rd
Duty = 0.5 0.2 0.1 0.05
1ms 10ms 100ms 1s DC
10
0.1 0.02 0.01
1
0.1 0.1
TC=25 C 1 10 80
o
Single Pulse 0.01 1E-4 1E-3 0.01 0.1
Mounted on 1in pad o RθJA :50 C/W
2
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006
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APM4350KP
Typical Characteristics (Cont.)
Output Characteristics
120 VGS= 6,7,8,9,10V 5.5V 100 4.5V 5V
Drain-Source On Resistance
20 18
RDS(ON) - On - Resistance (mΩ)
16 14 12 10 8 6 4
VGS=4.5V
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ID - Drain Current (A)
80
60 4V 40 3.5V 20 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS=10V
2
.