DatasheetsPDF.com

APM4350KP Dataheets PDF



Part Number APM4350KP
Manufacturers Anpec Electronics Coropration
Logo Anpec Electronics Coropration
Description N-Channel MOSFET
Datasheet APM4350KP DatasheetAPM4350KP Datasheet (PDF)

APM4350KP N-Channel Enhancement Mode MOSFET Features • 30V/60A, RDS(ON) =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V Pin Description D D D D S S S G • www.DataSheet4U.com • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) DD D D Applications • Power Management in Notebook Computer, or Decktop Computer. G S S S N-Channel MOSFET Ordering and Marking Information APM4350 Lead Free Code Handling Code Temp. Range Packag.

  APM4350KP   APM4350KP



Document
APM4350KP N-Channel Enhancement Mode MOSFET Features • 30V/60A, RDS(ON) =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V Pin Description D D D D S S S G • www.DataSheet4U.com • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) DD D D Applications • Power Management in Notebook Computer, or Decktop Computer. G S S S N-Channel MOSFET Ordering and Marking Information APM4350 Lead Free Code Handling Code Temp. Range Package Code Package Code KP : KPAK Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4350 KP : APM4350 XXXXX Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM4350KP Absolute Maximum Ratings Symbol VDSS VGSS TJ www.DataSheet4U.com (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 30 ±20 150 -55 to 150 50 140 80 60 35 50 20 2.5 TA=25°C TA=100°C TA=25°C TA=100°C Unit Common Ratings (TA=25°C Unless Otherwise Noted) V °C TSTG IS IDP °C A A Mounted on Large Heat Sink ID PD RθJC Continuous Drain Current A Maximum Power Dissipation Thermal Resistance-Junction to Case 2 W °C/W Mounted on PCB of 1in pad area ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°°C TA=25°C TA=100°C 13.5 8.5 2.5 1 50 10 6 1.5 0.5 75 W °C/W W °C/W A Mounted on PCB of Minimum Footprint ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM4350KP Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Condition APM4350KP Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS www.DataSheet4U.com VGS=0V, IDS=250µA VDS=24V, VGS=0V Tj=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=30A VGS=4.5V, IDS=15A ISD=15A, VGS=0V IDS=15A, dlSD/dt=100A/µs 30 1 30 1.3 1.8 7.5 11.5 2.5 ±100 9 14.5 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current a VGS(th) IGSS RDS(ON) Drain-Source On-state Resistance Diode Characteristics VSD trr Qrr a Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge b 0.75 11 3 1.1 V ns nC Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge b 28 VDS=15V, VGS=10V, IDS=30A 4 9 39 nC Gate-Source Charge Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Note¡G VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 1.6 1660 260 170 18 15 47 22 33 28 86 41 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM4350KP Typical Characteristics Power Dissipation 60 Drain Current 70 60 50 Ptot - Power (W) www.DataSheet4U.com 40 ID - Drain Current (A) 50 40 30 20 10 30 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 o 0 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 400 2 1 Thermal Transient Impedance 100 ID - Drain Current (A) it im )L n o s( Rd Duty = 0.5 0.2 0.1 0.05 1ms 10ms 100ms 1s DC 10 0.1 0.02 0.01 1 0.1 0.1 TC=25 C 1 10 80 o Single Pulse 0.01 1E-4 1E-3 0.01 0.1 Mounted on 1in pad o RθJA :50 C/W 2 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Output Characteristics 120 VGS= 6,7,8,9,10V 5.5V 100 4.5V 5V Drain-Source On Resistance 20 18 RDS(ON) - On - Resistance (mΩ) 16 14 12 10 8 6 4 VGS=4.5V www.DataSheet4U.com ID - Drain Current (A) 80 60 4V 40 3.5V 20 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS=10V 2 .


APM4240K APM4350KP APM4408


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)