Ordering number : ENN6664A
2SC5698
NPN Triple Diffused Planar Silicon Transistor
2SC5698
CRT Display Horizontal Deflec...
Ordering number : ENN6664A
2SC5698
NPN Triple Diffused Planar Silicon
Transistor
2SC5698
CRT Display Horizontal Deflection Output Applications
Features
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. t 4 Adoption On-chip damper diode.
Package Dimensions
unit : mm 2174A
[2SC5698]
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
0.8
2.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Ratings 1500 800 5 8 16 3.0 65 150 --55 to +150 Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=4.5A, IB=1.13A IC=4.5A, IB=1.13A Ratings min typ max 10 1.0 800 40 130 3 1.5 Unit µA mA V mA V V
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that requi...
