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ON1108 Dataheets PDF



Part Number ON1108
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description (ON1102 / ON1108) Photo lnterrupter
Datasheet ON1108 DatasheetON1108 Datasheet (PDF)

Transmissive Photosensors (Photo Interrupters) CNZ1102, CNZ1108 (ON1102, ON1108) Photo Interrupters CNZ1102 Unit : mm 25.0±0.35 13.0±0.3 3.0±0.2 For contactless SW, object detection Overview CNZ1102 and CNZ1108 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them.

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Transmissive Photosensors (Photo Interrupters) CNZ1102, CNZ1108 (ON1102, ON1108) Photo Interrupters CNZ1102 Unit : mm 25.0±0.35 13.0±0.3 3.0±0.2 For contactless SW, object detection Overview CNZ1102 and CNZ1108 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Mark for indicating LED side Device center 7.0 min. 2.5±0.2 10.0±0.2 2-0.45±0.2 *9.6±0.3 19.0±0.2 2 3 Features www.DataSheet4U.com Position detection accuracy : 1.2 mm 2-ø3.2±0.2 Large output current Fast response : tr, tf = 4 µs (typ.) (CNZ1102) 6 µs (typ.) (CNZ1108) Small output current variation against change in temperature Small package used for saving mounting space (CNZ1108) 6.2±0.2 *2.54±0.2 1 2 3.0±0.3 4 3 1 Pin connection (Note) * is dimension at the root of leads 4 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD *1 CNZ1108 Unit : mm Unit V mA mW mA V V mW ˚C 6.2±0.2 Mark for indicating LED side 13.0±0.3 3.0±0.2 A 3.5±0.2 Device center 3 50 75 20 30 5 100 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature *1 A' 4- 0.45±0.2 PC*2 *9.4±0.3 2 3 Operating ambient temperature Storage temperature Topr –25 to +85 Tstg –30 to +100 ˚C ; ;; *2.54±0.2 SEC. A-A' 2 3 1 Pin connection 4 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. 1 4 (Note) * is dimension at the root of leads Note) The part numbers in the parenthesis show conventional part number. 3.0±0.3 IC 7.0 min. 10.0±0.2 2.5±0.2 1 CNZ1102,CNZ1108 Transmissive Photosensors (Photo Interrupters) Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Collector cutoff current Output characteristics Collector to emitter capacitance Collector current Symbol VF IR Ct ICEO CC IC*2 VR = 3V VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f = 1MHz VCE = 10V, IF = 20mA 2 4 6 0.4 0.4 5 50 200 Conditions IF = 50mA min typ 1.2 max 1.5 10 Unit V µA pF nA pF mA µs µs V V CNZ1102 VCC = 10V, IC = 5mA, RL = 100Ω Response time tr , tf*1 Transfer CNZ1108 VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter CNZ1102 VCE(sat) IF = 50mA, IC = 1mA Saturation voltage CNZ1108 VCE(sat) IF = 50mA, IC = 0.1mA www.DataSheet4U.com *1 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf *2 IC classifications Class IC (mA) Q 2.0 to 5.0 R 4.0 to 10.0 S 7.0 to 20.0 ;; ;; 50Ω RL td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) IF , IC — Ta 60 60 IF — V F 10 2 Ta = 25˚C IC — I F VCE = 10V Ta = 25˚C IF , IC (mA) 50 IF 50 IF (mA) IC (mA) Collector current 10 Forward current, collector current 40 40 Forward current 30 IC 30 1 20 20 10 –1 10 10 0 – 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 –2 10 –1 1 10 10 2 Ambient temperature Ta (˚C ) Forward voltage VF (V) Forward current IF (mA) 2 Transmissive Photosensors (Photo Interrupters) CNZ1102,CNZ1108 VF — Ta 1.6 10 2 IC — VCE 160 Ta = 25˚C IC — Ta VCE = 10V IF = 20mA IC (mA) VF (V) 1.2 IF = 50mA 10 20mA 10mA IC (%) Relative output current IF = 30mA 120 Forward voltage Collector current 10mA 0.8 1 80 0.4 10 –1 40 www.DataSheet4U.com 0 – 40 – 20 0 20 40 60 80 100 10 –2 10 –1 1 10 10 2 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 10 3 tr — IC VCC = 10V Ta = 25˚C 100 IC — d Criterion 0 1 IC (%) 80 d ICEO (µA) 10 2 tr (µs) 10 –1 Relative output current RL = 1kΩ 10 500Ω 100Ω(ON1108) 100Ω(ON1102) 1 Sig.IN VCC Sig. V1 OUT V2 V2 RL 90% 10% 60 Dark current 10 –2 VCE = 24V 10V Rise time 40 10 –3 V1 50Ω 20 ; ; 10 –1 10 –2 10 –1 10 –4 – 40 – 20 tr 1 td tf 10 0 0 1 2 3 4 5 6 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Collector current IC (mA) Distance d (mm) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special atte.


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