AO4488

AO4488 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4488/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. www.DataSheet4U.com This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4488 and AO4488L are electrically identical. -RoHS Compliant -AO4488L is Halogen Free Features VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) S S S G D D D D G D S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G B Units V V TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG TA=25°C TA=70°C 20 17 80 50 375 3.1 2.0 -55 to 150 15 12 A mJ 1.7 1.1 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4488 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID = 250µA, VGS = 0V VDS = 30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±16V VDS = VGS ID = 250µA VGS = 10V, VDS = 5V VGS = 10V, ID = 20A Static Drain-Source On-Resistan...