AO4447 P-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM
The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable ...
