AO4442

AO4442 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). AO4442L is a Green Product ordering option. AO4442 and AO4442L are electrically identical. Features VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 75 ±25 3.1 2.5 20 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 38 69 24 Max 50 80 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4442 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Conditions ID=10mA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V,...