AO4435

AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) The AO4435 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications). SOIC-8 Top View S S S G D D D D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±25 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -10 -8 -80 3.1 2.0 -55 to 150 -8 -6 1.7 1.1 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady State Steady State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Conditions ID = -250µA, VGS = 0V VDS = -30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA VGS = -10V, VDS = -5V VGS = -10V, ID =...