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AO4425 P-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM
The AO4425 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4425 is Pb-free (meets ROHS & Sony 259 specifications). AO4425L is a Green Product ordering option. AO4425 and AO4425L are electrically identical.
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -38 ±25 -14 -11 -50 3.1 2 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 26 50 14
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4425
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V VGS=-20V, I D=-14A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-10V, I D=-14A Forward Transconductance VDS=-5V, ID=-14A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -2 -50 7.7 11 8.8 43 0.71 1 4.2 3800 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 560 350 7.5 63 VGS=-10V, VDS=-20V, I D=-14A 14.1 16.1 12.4 VGS=-10V, VDS=-20V, RL=1.35 Ω, RGEN=3Ω IF=-14A, dI/dt=100A/ µs IF=-14A, dI/dt=100A/ µs 9.2 97.5 45.5 35 33 10 13.5 11 -2.5 Min -38 -100 -500 ±1 ±10 -3.5 Typ Max Units V nA µA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th)
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Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. -15 C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 -ID (A) 15 10 5 -4V -3.5V -20V -10V -5V -4.5V -ID(A) 30 25 20 15 10 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance VGS=-10V ID = -14A 125°C 25°C VDS=-5V
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0 0 1 2 3
VGS=-3V 4 5
-VDS (Volts) Fig 1: On-Region Characteristics
10
9 RDS(ON) (mΩ )
VGS=-10V
1.4
8 VGS=-20V
1.2
VGS=-20V ID = -14A
7
1
6 0 5 10 15 20 25 30 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
20 ID=-14A
-12.8
-15 1.0E+01
1.0E+00 1.0E-01 125°C
RDS(ON) (mΩ )
15 125°C -IS (A)
1.0E-02 1.0E-03 1.0E-04
10 25°C
25°C 1.0E-05
5 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-15V ID=-14A Capacitance (pF) 5000 Ciss
8 -VGS (Volts)
4000
6
3000
4
2000 Coss Crss 0
2
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0 0 10 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteri.