AO4418

AO4418 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain CurrentB ID IDM TA=25°C Power Dissipation TA=70°C Avalanche CurrentB Repetitive avalanche energy 0.3mHB PD IAR EAR Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±25 11.5 9.7 40 3 2.1 20 60 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Alpha & Omega Semiconductor, Ltd. Units V V A W A mJ °C Units °C/W °C/W °C/W www.aosmd.com AO4418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Thres...