Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
De...
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 20 dB Drain Efficiency — 64%
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C
Operation In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
Document Number: MRF6VP41KH Rev. 6, 4/2012
MRF6VP41KHR6 MRF6VP41KHSR6
10--500 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs
CASE 375D--05, STYLE 1 NI--1230
MRF6VP41KHR6
CASE 375E--04, STYLE 1 NI--1230S
MRF6VP41KHSR6 PARTS ARE PUSH--PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6, +10
Vdc
Storage Tempera...