SI4908DY

Si4908DY New Product Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A)a 5.0 4.7 56 5.6 rDS(on) (W) 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V Qg (Typ) D TrenchFETr Power MOSFET D 100 % Rg Tested APPLICATIONS D CCFL Inverter D1 D2 RoHS COMPLIANT www.DataSheet4U.com S1 G1 S2 G2 1 2 3 4 SO-8 8 7 6 5 Top View Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free) S1 N-Channel MOSFET S2 N-Channel MOSFET D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current (10 ms Pulse Width) Source Drain Current Diode Current Source-Drain Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L=0 0.1 1 mH TC= 25 _C Maximum Power Dissipation TC= 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS ISM IAS EAS ID Symbol VDS VGS Limit 40 "16 5 4.7 4.1b, c 3.3b, c 20 2.3 1.5b, c 20 7 2.5 2.75 1.75 1.85b, c 1.18b, c –55 to 150 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes a. Based on TC = 25 _C. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 120 _C/W. Document Number: 73698 S–60218—Rev. A, 20-Feb-06 www.vishay.com t v 10 sec Steady-State S...