Document
PCT1600A ... PCT1600M
PCT1600A ... PCT1600M
Silicon Rectifiers – Common Cathode Silizium-Gleichrichter – Gemeinsame Kathode Version 2007-07-06
10 4 15.7
±0.2
Nominal current Nennstrom
4
16 A 50...1000 V TO-220AB 1.8 g
3.8
Type Typ
Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse
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13.2
1 2 3
3.4
3
1.5 0.9 2.54
1 2 3
Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) 50 100 200 400 600 800 1000 Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) 50 100 200 400 600 800 1000 TC = 100°C TC = 100°C f > 15 Hz TA = 25°C TA = 25°C
Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 8 A 1) 16 A 2) 30 A 3) 135/150 A 1) 90 A2s 1) -50...+150°C -50...+175°C < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 IFAV IFAV IFRM IFSM i2t
PCT1600A PCT1600B PCT1600D PCT1600G PCT1600J PCT1600K PCT1600M
Max. average forward current, R-load Dauergrenzstrom mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
TS
Tj
1 2 3
Per diode – Pro Diode Per device (parallel operation) − Pro Bauteil (Parallelbetrieb) Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C http://www.diotec.com/
© Diotec Semiconductor AG
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PCT1600A ... PCT1600M Characteristics Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C VR = VRRM IR RthC Kennwerte < 10 µA < 2.5 K/W 1)
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120 [%] 100
102 [A] 10
80 1
Tj = 125°C Tj = 25°C
60
40 10 20 IFAV 0 0 TC 50 100 150 [°C] IF 10-2 0.4
200a-(5a-0.95v)
-1
VF
0.8
1.0
1.2
1.4
[V] 1.8
Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
Forward characteristics (typical values) Durchlasskennlinien (typische Werte)
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Per diode – Pro Diode http://www.diotec.com/ © Diotec Semiconductor AG
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