Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2...
Power
Transistors
2SD2137, 2SD2137A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1417 and 2SB1417A
Unit: mm
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
s Absolute Maximum Ratings
Parameter Collector to www.DataSheet4U.com base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 60 80 60 80 6 5 3 15 2 150 –55 to +150 Unit V
90°
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
emitter voltage 2SD2137A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2137 2SD2137A 2SD2137 2SD2137A 2SD2137 2SD2137A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = ...
