HUR820

HUR820 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR820 VRSM V 200 VRRM V 200 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=150oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 8 80 0.5 0.2 -55...+175 175 -55...+150 60 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR820 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=8A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 50 0.2 0.94 1.30 2.5 0.5 Unit uA mA V K/W ns IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100 C o 25 4.1 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour ...