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HUR6040PT Dataheets PDF



Part Number HUR6040PT
Manufacturers Sirectifier Semiconductors
Logo Sirectifier Semiconductors
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet HUR6040PT DatasheetHUR6040PT Datasheet (PDF)

HUR6040PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=C.

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HUR6040PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR6040PT VRSM V 400 VRRM V 400 L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 2 x 30 tbd tbd tbd -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR6040PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.11 1.46 0.9 0.25 Unit uA mA V K/W ns IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 30 5.5 6.8 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR6040PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 IF 50 40 30 1600 nC 1200 TVJ= 100°C VR = 200V IRM 50 A 40 TVJ= 100°C VR = 200V TVJ=150°C TVJ=100°C TVJ= 25°C Qr 800 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A www.DataSheet4U.com 20 10 0 0.0 400 10 0.5 1.0 1.5 V 2.0 VF 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 3 Peak reverse current IRM versus -diF/dt 15 V VFR 0.6 2.0 TVJ= 100°C VR = 200V TVJ= 100°C IF = 30A tfr us tfr 0.4 1.5 Kf 1.0 trr 80 IF= 60A IF= 30A IF= 15A 70 10 VFR IRM 5 0.5 60 0.2 Qr 0.0 0 40 80 120 °C 160 TVJ 50 0 200 400 600 -diF/dt 800 1000 A/us 0 0 200 400 0.0 600 A/us 800 1000 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculatio.


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