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HUR6040PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions TO-247AD
Dim. A B C D E F G H J K
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
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A=Anode, C=Cathode, TAB=Cathode
HUR6040PT
VRSM V 400
VRRM V 400
L M N
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH VA=1.5.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 70 2 x 30 tbd tbd tbd -55...+175 175 -55...+150 165 0.8...1.2 6
Unit A A mJ A
o
C
W Nm g
HUR6040PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 250 1 1.11 1.46 0.9 0.25
Unit uA mA V K/W ns
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
o
30 5.5 6.8
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
HUR6040PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70 A 60 IF 50 40 30 1600 nC 1200
TVJ= 100°C VR = 200V
IRM
50 A 40
TVJ= 100°C VR = 200V
TVJ=150°C TVJ=100°C TVJ= 25°C
Qr 800
IF= 60A IF= 30A IF= 15A
30
20
IF= 60A IF= 30A IF= 15A
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10 0 0.0
400 10
0.5
1.0
1.5 V 2.0 VF
0 100
0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 3 Peak reverse current IRM versus -diF/dt
15 V VFR 0.6
2.0
TVJ= 100°C VR = 200V
TVJ= 100°C IF = 30A tfr
us tfr 0.4
1.5 Kf 1.0
trr 80
IF= 60A IF= 30A IF= 15A
70
10
VFR
IRM
5 0.5 60 0.2
Qr
0.0 0 40 80 120 °C 160 TVJ 50 0 200 400 600 -diF/dt 800 1000 A/us 0 0 200 400 0.0 600 A/us 800 1000 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculatio.