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HUR6030, HUR6040
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC A C(TAB) C
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Dim. A B C D E F G H J K L M N
C
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A
A=Anode, C=Cathode, TAB=Cathode VRSM V 300 400 VRRM V 300 400
HUR6030 HUR6040
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=110oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=3.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 70 60 700 1.6 0.4 -55...+175 175 -55...+150 230 0.8...1.2 6
Unit A A mJ A
o
C
W Nm g
HUR6030, HUR6040
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 650 2.5 1.25 1.71 0.65 0.25
Unit uA mA V K/W ns
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C
o
30 4.8
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
HUR6030, HUR6040
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
160 A IF 120 TVJ=150°C TVJ=100°C 80 TVJ= 25°C 400 Qr 800 TVJ = 100°C nC 600 IF = 120A IF = 60A IF = 30A VR = 150V IRM 15 25 A 20 IF = 120A IF = 60A IF = 30A TVJ = 100°C VR = 150V
10
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40 200 5
0 0.0
0.5
1.0
1.5 V VF
2.0
0 100
0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 3 Peak reverse current IRM versus -diF/dt
14 V 12 VFR 10 tfr VFR TVJ = 100°C IF = 60A 0.85 us 0.80 tfr 0.75
1.4
TVJ = 100°C VR = 150V
1.2 Kf 1.0 IRM
trr 80
70 Qr 60
0.8
IF = 120A IF = 60A IF = 30A
8
0.70
0.6
6
0.65
0.4 0 40 80 120 °C 160 TVJ
50 0 200 400 600 -diF/dt 800 1000 A/us
4 0 200 400
0.60 600 A/us 800 1000 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.005 0.0003 0.038
0.001
0.0001 0.00001
0.0001
0.001
0.01
0.1 t
s
1
Fig. 7 Transient thermal resistance junction to case
.