HUR60100PT

HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR60100PT HUR60120PT VRSM V 1000 1200 VRRM V 1000 1200 J K L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 2 x 30 200 14 1.2 -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.78 2.74 0.9 0.25 Unit uA mA V K/W ns IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 40 5.5 11.4 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switchin...