High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR60100PT, HUR60120PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A...
Description
HUR60100PT, HUR60120PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions TO-247AD
Dim. A B C D E F G H
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
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A=Anode, C=Cathode, TAB=Cathode
HUR60100PT HUR60120PT
VRSM V 1000 1200
VRRM V 1000 1200
J K L M N
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 70 2 x 30 200 14 1.2 -55...+175 175 -55...+150 165 0.8...1.2 6
Unit A A mJ A
o
C
W Nm g
HUR60100PT, HUR60120PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 250 1 1.78 2.74 0.9 0.25
Unit uA mA V K/W ns
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
o
40 5.5 11.4
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switchin...
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