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HUR2X30-120

Sirectifier Semiconductors

(HUR2X30-100 / HUR2X30-120) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227...


Sirectifier Semiconductors

HUR2X30-120

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Description
HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 www.DataSheet4U.com HUR2x30-100 HUR2x30-120 VRSM V 1000 1200 VRRM V 1000 1200 P Q R S T U V W Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Test Conditions TC=70oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=12A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 30 200 14 1.2 -40...+150 150 -40...+150 110 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Unit A A mJ A o C W V~ Nm/lb.in. g mounting torque (M4) terminal connection torque (M4) typical HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=125oC TVJ=25oC Test Conditions Characteristic Values typ. max. 0.25 1 1.96 ...




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