High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR2060CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions ...
Description
HUR2060CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R
A=Anode, C=Cathode, TAB=Cathode
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HUR2060CT
VRSM V 600
VRRM V 600
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=0.9A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive
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Maximum Ratings 35 2 x 10 50 0.1 0.1 -55...+175 175 -55...+150 60 0.4...0.6 2
Unit A A mJ A
o
C
W Nm g
HUR2060CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=10A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 60 0.25 1.42 2.10 2.5 0.5
Unit uA mA V K/W ns
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C
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35 4.4
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-v...
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