KM68FU8100

Preliminary KM68FU8100 Family Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft Draft Date August 25, 1999 Remark Preliminary www.DataSheet4U.com The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 August 1999 Preliminary KM68FU8100 Family FEATURES Process Technology: Full CMOS Organization: 1M x8 Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three state output and TTL Compatible Package Type: 44-TSOP2-400F/R, 48-FBGA-8.00x12.00 CMOS SRAM GENERAL DESCRIPTION The KM68FU8100 families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM PRO DUCT FAMILY Power Dissipation Product Family www.DataSheet4U.com KM68FU8100I Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 0.5µ A Operating (ICC1, Max) 3mA PKG Type 44-TSOP2-400F/R 48-FBGA-8.00x12.00 Industrial(-40~85°C) 2.7~3.3...