KMM466S823DT3

KMM466S823DT3 Revision History Revision 0.0 (July 5, 1999) PC66 SODIMM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. Symbol Change Notice www.DataSheet4U.com IIL IIL IOL Before Input leakage current (inputs) Input leakage current (I/O pins) Output open @ DC characteristic table ILI Io After Input leakage current Output open @ DC characteristic table Test Condition in DC CHARACTERISTIC Change Notice Symbol ICC2P , ICC3P ICC2N , ICC3N ICC4 Before CKE ≤ VIL(max), tCC = 15ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE ≤ VIL(max), tCC = 10ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 4 Banks activated Added Notes @OPERATING AC PARAMETER Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns. Revision 0.1 (July 29, 1999) Changed misprinted "Detail Y" @ PACKAGE DIMENSIONS. REV. 0.1 July 1999 KMM466S823DT3 KMM466S823DT3 SDRAM SODIMM PC66 SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM466S823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung K...