STTH200R04TV

STTH200R04TV Ultrafast recovery diode Main product characteristics IF(AV) www.DataSheet4U.com A1 K1 2 x 100 A 400 V 150° C 0.87 V 40 ns VRRM Tj VF (typ) trr (typ) A2 K2 A1 Features and benefits ■ ■ ■ ■ ■ K1 A2 K2 ISOTOP STTH200R04TV1 Ultrafast Very low switching losses High frequency and high pulsed current operation Low leakage current Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF Order codes Part Number Marking STTH200R04TV1 STTH200R04TV1 Description The STTH200R04TV series uses ST's new 400 V planar Pt doping technology. The STTH200R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 Rev 1 1/7 www.st.com 7 Characteristics STTH200R04TV 1 Table 1. Symbol VRRM VRSM IF(RMS) www.DataSheet4U.com I F(AV) Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Per diode Per diode Per package tp = 5 µs, F = 1 kHz square Tc = 80° C Tc = 65° C Value 400 400 150 100 200 2000 1000 -65 to + 150 150 Unit V V A A A A A °C °C IFRM IFSM Tstg Tj Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling t...