2SD415

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg 2SB548/ 2SD414 −80/80 2SB549/ 2SD415 −100/100 Unit V V V A A W W °C °C www.DataSheet.co.kr −100/120 −5.0/5.0 −0.8/0.8 −1.5/1.5 1.0 10 150 −55 to +150 Electrode Connection * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = −80/80 V, IE = 0 VEB = −3.0/3.0 V, IC = 0 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* VCE = −5.0/5.0 V, IC = −200/200 mA* IC = −500/500 mA, IB = −50/50 mA* IC = −500/500 mA, IB = −50/50 mA* VCE = −5.0/5.0 V, IC = −100/100 mA VCB = −10/10 V, IE = 0, f = 1.0 MHz 20 40 90 −0.4/0.3 −0.9/0.9 70/45 25/15 320 −2.0/2.0 −1.5/1.5 V V MH...