G4PH50UD

PD 91573A IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode www.DataSheet4U.com New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-cha nn el Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 180 180 16 180 ± 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Unit...