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STP80NF55-06FP

ST Microelectronics

N-CHANNEL POWER MOSFET

® STP80NF55-06 STP80NF55-06FP N - CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA T...


ST Microelectronics

STP80NF55-06FP

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Description
® STP80NF55-06 STP80NF55-06FP N - CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP80NF55-06 STP80NF55-06FP s s s s V DSS 55 V 55 V R DS(on) < 0.0065 Ω < 0.0065 Ω ID 80 A 60 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 2 3 1 2 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP80NF55-06 V DS V DGR V GS ID ID I DM ( ) P tot V ISO dv/dt Ts tg Tj July 1999 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Unit STP55NF 55-06FP 55 55 ± 20 V V V 60 42 240 50 0.33 2000 7 A A A W W/ oC V V/ns o o 80 57 320 210 1.43  -65 to 175 175 C C 1/6 () Pu...




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